A. a.c
B. d.c
C. both a.c. and d.c
D. none of the above
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Related Mcqs:
- Transistor biasing is generally provided by a_______________?
- A. Biasing circuit B. Bias battery C. Diode D. None of the above...
- Transistor biasing is done to keep _____________in the circuit?
- A. Proper direct current B. Proper alternating current C. The base current small D. Collector current small...
- The disadvantage of base resistor method of transistor biasing is that it_________________?
- A. Is complicated B. Is sensitive to changes in ß C. Provides high stability D. None of the above...
- For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?
- A. Not fall below 1 V B. Be zero C. Be 0.2 V D. None of the above...
- For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?
- A. Be zero B. Be 0.01 V C. Not fall below 0.7 V D. Be between 0 V and 0.1 V...
- The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?
- A. One hundredth B. One tenth C. One thousandth D. One millionth...
- If biasing is not done in an amplifier circuit, it results in________________?
- A. Decrease in the base current B. Unfaithful amplification C. Excessive collector bias D. None of the above...
- The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?
- A. 100 µA B. 25 µA C. 20 µA D. 50 µA...
- In the design of a biasing circuit, the value of collector load RC is determined by__________________?
- A. VCE consideration B. VBE consideration C. IB consideration D. None of the above...
- In a particular biasing circuit, the value of RE is about _________________?
- A. 10 kO B. 1 MO C. 100 kO D. 800 O...
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