A. Be zero
B. Be 0.01 V
C. Not fall below 0.7 V
D. Be between 0 V and 0.1 V
Related Mcqs:
- For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?
A. Not fall below 1 V
B. Be zero
C. Be 0.2 V
D. None of the above - A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?
A. 105 kO
B. 530 kO
C. 315 kO
D. None of the above - For germanium transistor amplifier, VCE should_______________for faithful amplification?
A. Be zero
B. Be 0.2 V
C. Not fall below 0.7 V
D. None of the above - For proper amplification by a transistor circuit, the operating point should be located at the_____________ of the d.c. load line?
A. The end point
B. Middle
C. The maximum current point
D. None of the above - The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?
A. One hundredth
B. One tenth
C. One thousandth
D. One millionth - The value of VBE ___________________?
A. Depends upon IC to moderate extent
B. Is almost independent of IC
C. Is strongly dependant on IC
D. None of the above - The value of collector load RC in a transistor amplifier is _______________the output impedance of the transistor?
A. The same as
B. Less than
C. More than
D. None of the above - A radio receiver has____________of amplification?
A. One stage
B. Two stages
C. Three stages
D. More than one stages - A current amplification of 2000 is a gain of_________________?
A. 3 db
B. 66 db
C. 20 db
D. 200 db - In order to get more voltage gain from a transistor amplifier, the transistor used should have_________________?
A. Thin base
B. Thin collector
C. Wide emitter
D. None of the above
