For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

Related Mcqs:

1. For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

   A. Not fall below 1 V
   B. Be zero
   C. Be 0.2 V
   D. None of the above

2. A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?

   A. 105 kO
   B. 530 kO
   C. 315 kO
   D. None of the above

3. For germanium transistor amplifier, VCE should_______________for faithful amplification?

   A. Be zero
   B. Be 0.2 V
   C. Not fall below 0.7 V
   D. None of the above

4. For proper amplification by a transistor circuit, the operating point should be located at the_____________ of the d.c. load line?

   A. The end point
   B. Middle
   C. The maximum current point
   D. None of the above

5. The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

   A. One hundredth
   B. One tenth
   C. One thousandth
   D. One millionth

6. The value of VBE ___________________?

   A. Depends upon IC to moderate extent
   B. Is almost independent of IC
   C. Is strongly dependant on IC
   D. None of the above

7. The value of collector load RC in a transistor amplifier is _______________the output impedance of the transistor?

   A. The same as
   B. Less than
   C. More than
   D. None of the above

8. A radio receiver has____________of amplification?

   A. One stage
   B. Two stages
   C. Three stages
   D. More than one stages

9. A current amplification of 2000 is a gain of_________________?

   A. 3 db
   B. 66 db
   C. 20 db
   D. 200 db

10. In order to get more voltage gain from a transistor amplifier, the transistor used should have_________________?

    A. Thin base
    B. Thin collector
    C. Wide emitter
    D. None of the above