Transistor biasing is generally provided by a_______________?

Related Mcqs:

1. Transistor biasing represents ______________ conditions?

   A. a.c
   B. d.c
   C. both a.c. and d.c
   D. none of the above

2. Transistor biasing is done to keep _____________in the circuit?

   A. Proper direct current
   B. Proper alternating current
   C. The base current small
   D. Collector current small

3. The disadvantage of base resistor method of transistor biasing is that it_________________?

   A. Is complicated
   B. Is sensitive to changes in ß
   C. Provides high stability
   D. None of the above

4. For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

   A. Not fall below 1 V
   B. Be zero
   C. Be 0.2 V
   D. None of the above

5. For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

   A. Be zero
   B. Be 0.01 V
   C. Not fall below 0.7 V
   D. Be between 0 V and 0.1 V

6. The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

   A. One hundredth
   B. One tenth
   C. One thousandth
   D. One millionth

7. If biasing is not done in an amplifier circuit, it results in________________?

   A. Decrease in the base current
   B. Unfaithful amplification
   C. Excessive collector bias
   D. None of the above

8. The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

   A. 100 µA
   B. 25 µA
   C. 20 µA
   D. 50 µA

9. In the design of a biasing circuit, the value of collector load RC is determined by__________________?

   A. VCE consideration
   B. VBE consideration
   C. IB consideration
   D. None of the above

10. In a particular biasing circuit, the value of RE is about _________________?

    A. 10 kO
    B. 1 MO
    C. 100 kO
    D. 800 O