In a particular biasing circuit, the value of RE is about _________________?

Related Mcqs:

1. In the design of a biasing circuit, the value of collector load RC is determined by__________________?

   A. VCE consideration
   B. VBE consideration
   C. IB consideration
   D. None of the above

2. If biasing is not done in an amplifier circuit, it results in________________?

   A. Decrease in the base current
   B. Unfaithful amplification
   C. Excessive collector bias
   D. None of the above

3. Transistor biasing is done to keep _____________in the circuit?

   A. Proper direct current
   B. Proper alternating current
   C. The base current small
   D. Collector current small

4. The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?

   A. 100 µA
   B. 25 µA
   C. 20 µA
   D. 50 µA

5. Transistor biasing represents ______________ conditions?

   A. a.c
   B. d.c
   C. both a.c. and d.c
   D. none of the above

6. Transistor biasing is generally provided by a_______________?

   A. Biasing circuit
   B. Bias battery
   C. Diode
   D. None of the above

7. The disadvantage of base resistor method of transistor biasing is that it_________________?

   A. Is complicated
   B. Is sensitive to changes in ß
   C. Provides high stability
   D. None of the above

8. If 1 A current flows in a circuit, the number of electrons flowing through this circuit is

   A. 0.625 × 10¹⁹
   B. 1.6 × 10¹⁹
   C. 1.6 × 10-¹⁹
   D. 0.625 × 10-¹⁹

9. The purpose of resistance in the emitter circuit of a transistor amplifier is to _________________?

   A. Limit the maximum emitter current
   B. Provide base-emitter bias
   C. Limit the change in emitter current
   D. None of the above

10. For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

    A. Not fall below 1 V
    B. Be zero
    C. Be 0.2 V
    D. None of the above