A. 10 kO
B. 1 MO
C. 100 kO
D. 800 O
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Related Mcqs:
- In the design of a biasing circuit, the value of collector load RC is determined by__________________?
- A. VCE consideration B. VBE consideration C. IB consideration D. None of the above...
- If biasing is not done in an amplifier circuit, it results in________________?
- A. Decrease in the base current B. Unfaithful amplification C. Excessive collector bias D. None of the above...
- Transistor biasing is done to keep _____________in the circuit?
- A. Proper direct current B. Proper alternating current C. The base current small D. Collector current small...
- The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by___________________?
- A. 100 µA B. 25 µA C. 20 µA D. 50 µA...
- Transistor biasing represents ______________ conditions?
- A. a.c B. d.c C. both a.c. and d.c D. none of the above...
- Transistor biasing is generally provided by a_______________?
- A. Biasing circuit B. Bias battery C. Diode D. None of the above...
- The disadvantage of base resistor method of transistor biasing is that it_________________?
- A. Is complicated B. Is sensitive to changes in ß C. Provides high stability D. None of the above...
- If 1 A current flows in a circuit, the number of electrons flowing through this circuit is
- A. 0.625 × 1019 B. 1.6 × 1019 C. 1.6 × 10-19 D. 0.625 × 10-19...
- The purpose of resistance in the emitter circuit of a transistor amplifier is to _________________?
- A. Limit the maximum emitter current B. Provide base-emitter bias C. Limit the change in emitter current D. None of the above...
- For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?
- A. Not fall below 1 V B. Be zero C. Be 0.2 V D. None of the above...
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