A. 3 V
B. 8 V
C. 6 V
D. 7 V
0
![]()
The purpose of resistance in the emitter circuit of a transistor amplifier is to _________________?
0
![]()
The base resistor method is generally used in ________________?
A. Limit the maximum emitter current
B. Provide base-emitter bias
C. Limit the change in emitter current
D. None of the above
0
![]()
In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor ___________________?
A. Amplifier circuits
B. Switching circuits
C. Rectifier circuits
D. None of the above
0
![]()
If the value of collector current IC increases, then the value of VCE ______________?
A. 25
B. 50
C. 100
D. 200
0
![]()
In a particular biasing circuit, the value of RE is about _________________?
A. Remains the same
B. Decreases
C. Increases
D. None of the above
0
![]()
The value of VBE ___________________?
A. 10 kO
B. 1 MO
C. 100 kO
D. 800 O
0
![]()
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?
A. Depends upon IC to moderate extent
B. Is almost independent of IC
C. Is strongly dependant on IC
D. None of the above
0
![]()
When the temperature changes, the operating point is shifted due to _______________?
A. 105 kO
B. 530 kO
C. 315 kO
D. None of the above
0
![]()
The stabilisation of operating point in potential divider method is provided by_______________?
A. Change in ICBO
B. Change in VCC
C. Change in the values of circuit resistance
D. None of the above