Transistor Biasing

A. 3 V
B. 8 V
C. 6 V
D. 7 V

A. Limit the maximum emitter current
B. Provide base-emitter bias
C. Limit the change in emitter current
D. None of the above

A. Amplifier circuits
B. Switching circuits
C. Rectifier circuits
D. None of the above

A. 25
B. 50
C. 100
D. 200

A. Remains the same
B. Decreases
C. Increases
D. None of the above

A. 10 kO
B. 1 MO
C. 100 kO
D. 800 O

A. Depends upon IC to moderate extent
B. Is almost independent of IC
C. Is strongly dependant on IC
D. None of the above

A. 105 kO
B. 530 kO
C. 315 kO
D. None of the above

A. Change in ICBO
B. Change in VCC
C. Change in the values of circuit resistance
D. None of the above

A. RE consideration
B. RC consideration
C. VCC consideration
D. None of the above