Transistor Biasing

A. VCE consideration
B. VBE consideration
C. IB consideration
D. None of the above

A. Be zero
B. Be 0.2 V
C. Not fall below 0.7 V
D. None of the above

A. VBE
B. 2VBE
C. 5 VBE
D. None of the above

A. The same as
B. More than
C. Less than
D. None of the above

A. Remains the same
B. Is increased
C. Is decreased
D. None of the above

A. RB (ß+1)
B. (ß+1)RC
C. (ß+1)
D. 1-ß

A. 7 V
B. 3 V
C. V
D. 8 V

A. 2000 O
B. 1400 O
C. 800 O
D. 1600 O

A. High stability factor
B. Low base current
C. Many resistors
D. None of the above

A. The end point
B. Middle
C. The maximum current point
D. None of the above