A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter
Advertisement
Related Mcqs:
- A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
- A. IGBT B. FCT C. MCT D. GTO...
- A power MOSFET has three terminals called___________?
- A. Collector, emitter and gate B. Drain, source and gate C. Drain, source and base D. Collector, emitter and base...
- The power MOSFET device is a___________?
- A. Current controlled unipolar device B. Voltage controlled unipolar device C. Current controlled bipolar device D. Voltage controlled bipolar device...
- A MOSFET, for its conduction uses_____________?
- A. Only minority carriers B. Only majority carriers C. Both minority and majority carriers D. None of these...
- IGBT stands for___________?
- A. Insulated gate bipolar transistor B. Insulated gate bidirectional transistor C. Inductive gate bipolar transistor D. Inductive gate bidirectional transistor...
- LISN is a device used to measure conducted emissions. LISN stands for_____________?
- A. Line integrated stabilization network B. Line impedance stabilization network C. Line integrated stored network D. Laser integrated stabilization networking...
- In commutation PAC stands for_______?
- A. Permanent angle converter B. Phase angle converter C. Phase angle commutation D. Phase and commutation...
- An SCR has half cycle surge current rating of 3000 A for 50 Hz supply. One cycle surge current will be_____?
- A. 1500 A. B. 6000 A. C. 2121.32 A. D. 4242.64 A....
- Which of following devices has highest di/dt and dv/dt capability?
- A. SIT B. SITH C. GTO D. SCR...
- SITH is also known as___________?
- A. Filled controlled diode B. Filled controlled rectifier C. Silicon controlled rectifier D. None of these...
Advertisement
