A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter
Related Mcqs:
- A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO - A power MOSFET has three terminals called___________?
A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base - The power MOSFET device is a___________?
A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device - A MOSFET, for its conduction uses_____________?
A. Only minority carriers
B. Only majority carriers
C. Both minority and majority carriers
D. None of these - IGBT stands for___________?
A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor - LISN is a device used to measure conducted emissions. LISN stands for_____________?
A. Line integrated stabilization network
B. Line impedance stabilization network
C. Line integrated stored network
D. Laser integrated stabilization networking - In commutation PAC stands for_______?
A. Permanent angle converter
B. Phase angle converter
C. Phase angle commutation
D. Phase and commutation - An SCR has half cycle surge current rating of 3000 A for 50 Hz supply. One cycle surge current will be_____?
A. 1500 A.
B. 6000 A.
C. 2121.32 A.
D. 4242.64 A. - Which of following devices has highest di/dt and dv/dt capability?
A. SIT
B. SITH
C. GTO
D. SCR - SITH is also known as___________?
A. Filled controlled diode
B. Filled controlled rectifier
C. Silicon controlled rectifier
D. None of these
