A. IGBT
B. FCT
C. MCT
D. GTO
Related Mcqs:
- The power MOSFET device is a___________?
A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device - TRIAC is a semiconductor power electronic device which contains____________?
A. Two SCR’s connected in reverse parallel
B. Two SCR’s connected in parallel
C. Two SCR’s connected in series
D. Two BJT’s connected in series - Which semiconductor device acts like a diode and two transistor?
A. UJT
B. Diac
C. Triac
D. SCR - Bidirectional semiconductor device is___________?
A. Diode
B. BJT
C. SCR
D. TRIAC - In BJT, the forward biased base emitter junction inject holes from base to emitter, the holes_______?
A. Do not contribute to the collector current
B. Result in net current flow component into the base
C. Contribute to the collector current
D. Only (a) and (b)
E. Only (b) and (c) - In BJT, switching losses occurs___________?
A. Only at turn – on
B. Only at turn – off
C. Both at turn on and off
D. None of these - A power MOSFET has three terminals called___________?
A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base - A power semiconductor may undergo damage due to____________?
A. High di/dt
B. High dv/dt
C. Low di/dt
D. Low dv/dt - A MOSFET, for its conduction uses_____________?
A. Only minority carriers
B. Only majority carriers
C. Both minority and majority carriers
D. None of these - MOSFET stands for______________?
A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter
