A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device
Related Mcqs:
- A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO - A power MOSFET has three terminals called___________?
A. Collector, emitter and gate
B. Drain, source and gate
C. Drain, source and base
D. Collector, emitter and base - In constant frequency PWM, at perturbation the amplitude of the sinusoidal component is a___________?
A. Linear function
B. Non linear function
C. Constant function
D. None of these - A MOSFET, for its conduction uses_____________?
A. Only minority carriers
B. Only majority carriers
C. Both minority and majority carriers
D. None of these - MOSFET stands for______________?
A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter - COOLMOS device can be used in application up to power range of___________?
A. 1 KVA
B. 2 KVA
C. 500 VA
D. 100 KVA - Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor - TRIAC is a semiconductor power electronic device which contains____________?
A. Two SCR’s connected in reverse parallel
B. Two SCR’s connected in parallel
C. Two SCR’s connected in series
D. Two BJT’s connected in series - Power electronics essentially deals with control of a.c. power at____________?
A. Frequencies above 20 kHz
B. Frequencies above 1000 kHz
C. Frequencies less than 10 Hz
D. 50 Hz frequency - Under normal operating condition voltage clamping device offers impedance of_________?
A. high value.
B. low value.
C. zero value.
D. moderate value.
