A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor
Related Mcqs:
- The IGBT resulted in higher switching speed and lower energy losses. It can be used for___________?
A. Uninterruptible power supplies
B. Induction heating system
C. Constant voltage and frequency power supplies
D. All of these - IGBT combines the advantages of_____________?
A. BJTs and SITs
B. BJTs and MOSFETs
C. SITs and MOSFETs
D. None of these - The conduction losses in IGBT is____________?
A. More than that of MOSFET
B. Lower than that of MOSFET
C. Equal to that of MOSFET
D. Equal to that of BJT - The on – state voltage drop of IGBT consists of__________?
A. Drop across the collector junction
B. Drop across the drift region
C. Drop across MOSFET portion
D. All of these - In a square – wave operation of 3 phase CSIs, the power values are on for___________?
A. 60 degree
B. 90 degree
C. 120 degree
D. 150 degree - LISN is a device used to measure conducted emissions. LISN stands for_____________?
A. Line integrated stabilization network
B. Line impedance stabilization network
C. Line integrated stored network
D. Laser integrated stabilization networking - In commutation PAC stands for_______?
A. Permanent angle converter
B. Phase angle converter
C. Phase angle commutation
D. Phase and commutation - MOSFET stands for______________?
A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter - A single phase full bridge inverter can operated in load commutation mode in case load consist of______?
A. RL.
B. RLC underdamped.
C. RLC overdamped.
D. RLC critically damped - The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?
A. 600 V/µs
B. 800 V/µs
C. 1200 V/µs
D. 1000 V/µs
