A. Uninterruptible power supplies
B. Induction heating system
C. Constant voltage and frequency power supplies
D. All of these
Related Mcqs:
- IGBT stands for___________?
A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor - The conduction losses in IGBT is____________?
A. More than that of MOSFET
B. Lower than that of MOSFET
C. Equal to that of MOSFET
D. Equal to that of BJT - In BJT, switching losses occurs___________?
A. Only at turn – on
B. Only at turn – off
C. Both at turn on and off
D. None of these - Compared to transistor, _________ have lower on state conduction losses and higher power handling capability?
A. TRIACs
B. Semi conductor diodes
C. MOSFETs
D. Thyristor - IGBT combines the advantages of_____________?
A. BJTs and SITs
B. BJTs and MOSFETs
C. SITs and MOSFETs
D. None of these - The on – state voltage drop of IGBT consists of__________?
A. Drop across the collector junction
B. Drop across the drift region
C. Drop across MOSFET portion
D. All of these - Switching frequency of SITH is____________?
A. 5 KHz
B. 10 KHz
C. 60 KHz
D. 100 KHz - Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor - The switching function of semiconductor devices can be characterized with___________?
A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay - The switching function of semiconductor devices can be characterized with____________?
A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay
