A. Uninterruptible power supplies
B. Induction heating system
C. Constant voltage and frequency power supplies
D. All of these
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Related Mcqs:
- IGBT stands for___________?
- A. Insulated gate bipolar transistor B. Insulated gate bidirectional transistor C. Inductive gate bipolar transistor D. Inductive gate bidirectional transistor...
- The conduction losses in IGBT is____________?
- A. More than that of MOSFET B. Lower than that of MOSFET C. Equal to that of MOSFET D. Equal to that of BJT...
- In BJT, switching losses occurs___________?
- A. Only at turn – on B. Only at turn – off C. Both at turn on and off D. None of these...
- Compared to transistor, _________ have lower on state conduction losses and higher power handling capability?
- A. TRIACs B. Semi conductor diodes C. MOSFETs D. Thyristor...
- IGBT combines the advantages of_____________?
- A. BJTs and SITs B. BJTs and MOSFETs C. SITs and MOSFETs D. None of these...
- The on – state voltage drop of IGBT consists of__________?
- A. Drop across the collector junction B. Drop across the drift region C. Drop across MOSFET portion D. All of these...
- Switching frequency of SITH is____________?
- A. 5 KHz B. 10 KHz C. 60 KHz D. 100 KHz...
- Which one is most suitable power device for high frequency (>100 KHz) switching application?
- A. BJT B. Power MOSFET C. Schottky diode D. Microwave transistor...
- The switching function of semiconductor devices can be characterized with___________?
- A. Duty ratio only B. Frequency only C. Duty ratio and frequency D. Duty ratio, frequency and time delay...
- The switching function of semiconductor devices can be characterized with____________?
- A. Duty ratio only B. Frequency only C. Duty ratio and frequency D. Duty ratio, frequency and time delay...
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