A. Drop across the collector junction
B. Drop across the drift region
C. Drop across MOSFET portion
D. All of these
Related Mcqs:
- IGBT combines the advantages of_____________?
A. BJTs and SITs
B. BJTs and MOSFETs
C. SITs and MOSFETs
D. None of these - IGBT stands for___________?
A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor - The conduction losses in IGBT is____________?
A. More than that of MOSFET
B. Lower than that of MOSFET
C. Equal to that of MOSFET
D. Equal to that of BJT - The IGBT resulted in higher switching speed and lower energy losses. It can be used for___________?
A. Uninterruptible power supplies
B. Induction heating system
C. Constant voltage and frequency power supplies
D. All of these - ON state voltage drop across SCR lie between the range_____________?
A. 0 – 0.5 V.
B. 0.5 – 1 V.
C. 1 – 1.5 V.
D. 1.5 – 2 V. - A step up chopper has input voltage 110 V and output voltage 150 V. The value of duty cycle is_____?
A. 0.32
B. 0.67
C. 0.45
D. 0.27 - Under over voltage condition impedance offered by the voltage clamping device is__________?
A. low
B. High
C. moderate
D. infinity - The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?
A. 600 V/µs
B. 800 V/µs
C. 1200 V/µs
D. 1000 V/µs - In a single phase full wave rectifier, during blocking state the pea inverse voltage of diode is______________?
A. V m
B. 2 V m
C. V m / 2
D. 4 V m - Between the incoming and outgoing devices in voltage commutation
A. Large overlapping takes place
B. Small overlapping operation
C. No overlapping operation
D. None of these
