A. BJTs and SITs
B. BJTs and MOSFETs
C. SITs and MOSFETs
D. None of these
Related Mcqs:
- IGBT stands for___________?
A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor - The conduction losses in IGBT is____________?
A. More than that of MOSFET
B. Lower than that of MOSFET
C. Equal to that of MOSFET
D. Equal to that of BJT - The on – state voltage drop of IGBT consists of__________?
A. Drop across the collector junction
B. Drop across the drift region
C. Drop across MOSFET portion
D. All of these - The IGBT resulted in higher switching speed and lower energy losses. It can be used for___________?
A. Uninterruptible power supplies
B. Induction heating system
C. Constant voltage and frequency power supplies
D. All of these - A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO - Advantages of HVDC transmission over AC system is / are____________?
a. Reversal of power can be controlled by firing angle
b. Very good dynamic behavior
c. They can link two AC system operating unsynchronized
d. All of these - Advantages of Cuk converter is / are_____________?
A. Large number of reactive component
B. Low stress on switch
C. Low stress on capacitor
D. None of these - A single phase full bridge inverter can operated in load commutation mode in case load consist of______?
A. RL.
B. RLC underdamped.
C. RLC overdamped.
D. RLC critically damped - The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?
A. 600 V/µs
B. 800 V/µs
C. 1200 V/µs
D. 1000 V/µs - Power transistor are type of___________?
A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above
