A. 100 O cm
B. 6000 O cm
C. 3 x 105 O m
D. 6 x 10-8 O cm
Related Mcqs:
- The resistivity of pure germanium under standard conditions is about_______________?
A. 6 x 104 cm
B. 60 x cm
C. 3 x 106 cm
D. 6 x 10-4 cm - The unit of resistivity is
A. Ω.
B. Ω – metre.
C. Ω / metre.
D. Ω / m². - The resistivity of the conductor depends on
A. area of the conductor.
B. length of the conductor.
C. type of material.
D. none of these. - At room temperature, an intrinsic silicon crystal acts approximately as_______________?
A. A battery
B. A conductor
C. An insulator
D. A piece of copper wire - For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?
A. Not fall below 1 V
B. Be zero
C. Be 0.2 V
D. None of the above - For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?
A. Be zero
B. Be 0.01 V
C. Not fall below 0.7 V
D. Be between 0 V and 0.1 V - The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?
A. One hundredth
B. One tenth
C. One thousandth
D. One millionth - A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?
A. 105 kO
B. 530 kO
C. 315 kO
D. None of the above - When a pure semiconductor is heated, its resistance_________________?
A. Goes up
B. Goes down
C. Remains the same
D. Can’t say - The impurity level in an extrinsic semiconductor is about_______________of pure semiconductor ?
A. 10 atoms for 108 atoms
B. 1 atom for 108 atoms
C. 1 atom for 104 atoms
D. 1 atom for 100 atoms
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