A. 100 to 500 mA/V
B. 500 to 1000 mA/V
C. 0.5 to 30 mA/V
D. above 1000 mA/V
Related Mcqs:
- The channel of a JFET is between the ________________?
A. gate and drain
B. drain and source
C. gate and source
D. input and output - In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ________________?
A. 450
B. 45
C. 2.52
D. 4.5 - In a JFET, IDSS is known as ________________?
A. drain to source current
B. drain to source current with gate shorted
C. drain to source current with gate open
D. none of the above - The gate of a JFET is ___________ biased?
A. reverse
B. forward
C. reverse as well as forward
D. none of the above - A JFET is similar in operation to ___________ valve?
A. diode
B. pentode
C. triode
D. tetrode - A JFET has high input impedance because _________________?
A. it is made of semiconductor material
B. input is reverse biased
C. of impurity atoms
D. none of the above - In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ______________?
A. almost touch each other
B. have large gap
C. have moderate gap
D. none of the above - If the gate of a JFET is made less negative, the width of the conducting channel__________________?
A. remains the same
B. is decreased
C. is increased
D. none of the above - A certain common-source JFET has a voltage gain of 10. If the source bypass capacitor is removed, ______________?
A. the voltage gain will increase
B. the transconductance will increase
C. the voltage gain will decrease
D. the Q-point will shift - At cut-off, the JFET channel is _____________?
A. at its widest point
B. completely closed by the depletion region
C. extremely narrow
D. reverse baised
