Related Mcqs:

1. If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ______________?

   A. is decreased
   B. is increased
   C. remains the same
   D. none of the above

2. In a p-channel JFET, the charge carriers are _____________?

   A. electrons
   B. holes
   C. both electrons and holes
   D. none of the above

3. At cut-off, the JFET channel is _____________?

   A. at its widest point
   B. completely closed by the depletion region
   C. extremely narrow
   D. reverse baised

4. The transconductance of a JFET ranges from ________________?

   A. 100 to 500 mA/V
   B. 500 to 1000 mA/V
   C. 0.5 to 30 mA/V
   D. above 1000 mA/V

5. In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ________________?

   A. 450
   B. 45
   C. 2.52
   D. 4.5

6. In a JFET, IDSS is known as ________________?

   A. drain to source current
   B. drain to source current with gate shorted
   C. drain to source current with gate open
   D. none of the above

7. If the cross-sectional area of the channel in n-channel JEFT increases, the drain current _____________?

   A. is increased
   B. is decreased
   C. remains the same
   D. none of the above

8. The pinch-off voltage of a JFET is about _______________?

   A. 5 V
   B. 0.6 V
   C. 15 V
   D. 25 V

9. A CS JFET amplifier has a load resistance of 10 kO , RD= 820O . If gm= 5mS and Vin= 500 mV, the output signal voltage is__________________?

   A. 2.05 V
   B. 25 V
   C. 0.5 V
   D. 1.89 V

10. A common base configuration of a pnp transistor is analogous to _____________?of a JFET

    A. common source configuration
    B. common drain configuration
    C. common gate configuration
    D. none of the above