The channel of a JFET is between the ________________?

Related Mcqs:

1. If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ______________?

   A. is decreased B. is increased C. remains the same D. none of the above...

2. In a p-channel JFET, the charge carriers are _____________?

   A. electrons B. holes C. both electrons and holes D. none of the above...

3. At cut-off, the JFET channel is _____________?

   A. at its widest point B. completely closed by the depletion region C. extremely narrow D. reverse baised...

4. The transconductance of a JFET ranges from ________________?

   A. 100 to 500 mA/V B. 500 to 1000 mA/V C. 0.5 to 30 mA/V D. above 1000 mA/V...

5. In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ________________?

   A. 450 B. 45 C. 2.52 D. 4.5...

6. In a JFET, IDSS is known as ________________?

   A. drain to source current B. drain to source current with gate shorted C. drain to source current with gate open D. none of the above...

7. If the cross-sectional area of the channel in n-channel JEFT increases, the drain current _____________?

   A. is increased B. is decreased C. remains the same D. none of the above...

8. The pinch-off voltage of a JFET is about _______________?

   A. 5 V B. 0.6 V C. 15 V D. 25 V...

9. A CS JFET amplifier has a load resistance of 10 kO , RD= 820O . If gm= 5mS and Vin= 500 mV, the output signal voltage is__________________?

   A. 2.05 V B. 25 V C. 0.5 V D. 1.89 V...

10. A common base configuration of a pnp transistor is analogous to _____________?of a JFET

    A. common source configuration B. common drain configuration C. common gate configuration D. none of the above...