A. gate and drain
B. drain and source
C. gate and source
D. input and output
Related Mcqs:
- If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ______________?
A. is decreased
B. is increased
C. remains the same
D. none of the above - In a p-channel JFET, the charge carriers are _____________?
A. electrons
B. holes
C. both electrons and holes
D. none of the above - At cut-off, the JFET channel is _____________?
A. at its widest point
B. completely closed by the depletion region
C. extremely narrow
D. reverse baised - The transconductance of a JFET ranges from ________________?
A. 100 to 500 mA/V
B. 500 to 1000 mA/V
C. 0.5 to 30 mA/V
D. above 1000 mA/V - In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ________________?
A. 450
B. 45
C. 2.52
D. 4.5 - In a JFET, IDSS is known as ________________?
A. drain to source current
B. drain to source current with gate shorted
C. drain to source current with gate open
D. none of the above - If the cross-sectional area of the channel in n-channel JEFT increases, the drain current _____________?
A. is increased
B. is decreased
C. remains the same
D. none of the above - The pinch-off voltage of a JFET is about _______________?
A. 5 V
B. 0.6 V
C. 15 V
D. 25 V - A CS JFET amplifier has a load resistance of 10 kO , RD= 820O . If gm= 5mS and Vin= 500 mV, the output signal voltage is__________________?
A. 2.05 V
B. 25 V
C. 0.5 V
D. 1.89 V - A common base configuration of a pnp transistor is analogous to _____________?of a JFET
A. common source configuration
B. common drain configuration
C. common gate configuration
D. none of the above