A. IB
B. ICEO
C. ICBO
D. ßIB
Related Mcqs:
- In a transistor, the base current is about_________of emitter current?
A. 25%
B. 20%
C. 35 %
D. 5% - The voltage gain in a transistor connected in___________arrangement is the highest?
A. common base
B. common collector
C. common emitter
D. none of the above - The power gain in a transistor connected in___________arrangement is the highest?
A. common emitter
B. common base
C. common collector
D. none of the above - A heat sink is generally used with a transistor to______________?
A. increase the forward current
B. decrease the forward current
C. compensate for excessive doping
D. prevent excessive temperature rise - If the value of a is 0.9, then value of ß is___________?
A. 9
B. 0.9
C. 900
D. 90 - The base of a transistor is____________doped?
A. heavily
B. moderately
C. lightly
D. none of the above - The phase difference between the input and output voltages in a common base arrangement is___________?
A. 180o
B. 90o
C. 270o
D. 0o - The value of a of a transistor is_____________?
A. more than 1
B. less than 1
C. 1
D. none of the above - In a pnp transistor, the current carriers are______________?
A. acceptor ions
B. donor ions
C. free electrons
D. holes - IC = [a / (1 – a )] IB +_____________?
A. ICEO
B. ICBO
C. IC
D. (1 – a ) IB