A. ICEO
B. ICBO
C. IC
D. (1 – a ) IB
Related Mcqs:
- The element that has the biggest size in a transistor is____________?
A. collector
B. base
C. emitter
D. collector-base-junction - Most of the majority carriers from the emitter____________?
A. recombine in the base
B. recombine in the emitter
C. pass through the base region to the collector
D. none of the above - The power gain in a transistor connected in___________arrangement is the highest?
A. common emitter
B. common base
C. common collector
D. none of the above - IC = [a / (1 – a )] IB + [___________ / (1 – a )?
A. ICBO
B. ICEO
C. IC
D. IE - A heat sink is generally used with a transistor to______________?
A. increase the forward current
B. decrease the forward current
C. compensate for excessive doping
D. prevent excessive temperature rise - The phase difference between the input and output voltages of a transistor connected in common collector arrangement is_____________?
A. 1800
B. 00
C. 900
D. 2700 - The base of a transistor is____________doped?
A. heavily
B. moderately
C. lightly
D. none of the above - The output impedance of a transistor is____________?
A. high
B. zero
C. low
D. very low - The leakage current in CE arrangement is____________that in CB arrangement?
A. more than
B. less than
C. the same as
D. none of the above - IC = aIE +____________?
A. IB
B. ICEO
C. ICBO
D. ßIB