Which statement is true ?

Related Mcqs:

1. Which statement is true for latching current ___________?

   A.It is related to turn off process of the device.
   B. It is related to conduction process of device.
   C. It is related to turn on process of the device.
   D. Both C and D.

2. Which of the following is true about SIT?

   A. SIT is a high power, high frequency device
   B. SIT is a high power, low frequency device
   C. SIT is a high power, high voltage device
   D. SIT is a low power, high frequency device

3. A PNPN device having two gates is ___________?

   A. Diac
   B. Triac
   C. SUS
   D. BCS

4. Leakage current flows through the thyristor in_________?

   A. forward blocking mode
   B. reverse blocking mode
   C. both forward and reverse blocking mode
   D. forward conduction mode

5. The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?

   A. 130 μs
   B. 135 μs
   C. 140 μs
   D. 145 μs

6. Electrical power output in a d.c. generator is equal to____________?

   A. Electrical power developed in armature – copper losses
   B. Mechanical power input – iron and friction losses
   C. Electrical power developed in armature – iron and copper losses
   D. Mechanical power input – iron and friction losses – copper losses

7. The control method used for PWM dc – dc converter is______________?

   A. Voltage mode control
   B. Current mode control
   C. Hysteric control
   D. All of these

8. The maximum firing angle in the half wave controlled regulator is_____________?

   A. 180 degree
   B. 190 degree
   C. 200 degree
   D. 210 degree

9. The phase angle of gate signal in TRIAC can be shifted by using_____________?

   A. A capacitor
   B. A variable resistor
   C. An inductor
   D. Only (a) and (b)

10. An SCR is made up of silicon because_____________?

    A. silicon has large leakage current than germanium
    B. silicon has small leakage current than germanium
    C. silicon has small leakage voltage than germanium
    D. silicon has large leakage voltage than germanium