A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay
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Related Mcqs:
- The switching function of semiconductor devices can be characterized with___________?
- A. Duty ratio only B. Frequency only C. Duty ratio and frequency D. Duty ratio, frequency and time delay...
- Switching frequency of SITH is____________?
- A. 5 KHz B. 10 KHz C. 60 KHz D. 100 KHz...
- Which one is most suitable power device for high frequency (>100 KHz) switching application?
- A. BJT B. Power MOSFET C. Schottky diode D. Microwave transistor...
- In BJT, switching losses occurs___________?
- A. Only at turn – on B. Only at turn – off C. Both at turn on and off D. None of these...
- The IGBT resulted in higher switching speed and lower energy losses. It can be used for___________?
- A. Uninterruptible power supplies B. Induction heating system C. Constant voltage and frequency power supplies D. All of these...
- Which semiconductor device acts like a diode and two transistor?
- A. UJT B. Diac C. Triac D. SCR...
- A power semiconductor may undergo damage due to____________?
- A. High di/dt B. High dv/dt C. Low di/dt D. Low dv/dt...
- A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
- A. IGBT B. FCT C. MCT D. GTO...
- Bidirectional semiconductor device is___________?
- A. Diode B. BJT C. SCR D. TRIAC...
- TRIAC is a semiconductor power electronic device which contains____________?
- A. Two SCR’s connected in reverse parallel B. Two SCR’s connected in parallel C. Two SCR’s connected in series D. Two BJT’s connected in series...
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