A. high current demand
B. low voltage demand
C. low current demand
D. high voltage demand
Related Mcqs:
- A thyristor string is made of a no. of SCR connected in series and parallel. The string have volume and current of 11 KV and 4 KA. The voltage and current rating of available SCRs are 1800 V and 1000 A. For a string efficiency of 90 % let the number of SCRs in series and parallel are a and b respectively. Then the value of a and b will be_____________?
A. 5, 7
B. 4, 6
C. 7, 5
D. 6, 4 - Practical way of obtaining static voltage equalization in series connected SCRs is by the use of____________?
A. One resistor across the string
B. Resistors of the same value across each SCR
C. Resistors of different values across each SCR
D. One resistor in series with each SCR - To meet high current demand we use SCRs in______________?
A. series connection.
B. parallel connection.
C. anti parallel connection.
D. both B and C. - A string of n parallel SCRs is operated at 72 KA, the rating of each SCR is 1 KA. If derating factor of the string is 0.1. value of n will be___________?
A. 60
B. 70
C. 80
D. 90 - For series connected SCR’s dynamic equalising circuit consists of___________?
A. R and C in series but with diode across C
B. R and C in series but with diode across R
C. Series R and diode with C across R
D. Series R and diode with C across R - 60 thyrsistors are connected in series and parallel to form a 10 KV and 5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel path are 6. The efficiency of the switch is______________________?
A. 76.3 %
B. 91.6 %
C. 83.3 %
D. 90.9 % - 4 thyristors rated 200 V in series. The operating voltage of the string is 600 V. Derating factor of the string is_____________________?
A. 0.75
B. 0.7
C. 0.2
D. 0.25 - Double fourier series analysis of PWM is_____________?
A. Two dimensional functions
B. Three dimensional functions
C. One dimensional functions
D. All of these - What is used to protect the SCR from over current ________________?
A. CB and fuse.
B. Heat sink.
C. Snubber circuit.
D. Voltage clamping device. - A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO