A. gate current rises from 90 % to 100 % of it final value
B. anode voltage drops from 90 % to 10 % of its initial value
C. anode current rises 10 % to 90 % of its final value
D. both B and C
Related Mcqs:
- Delay time is defined by the interval when_______________?
A. gate current increases from 90 % to 100 % of its final value
B. anode current reaches 10 % from forward leakage current
C. anode voltage drops from 100 % to 90 % of its actual value
D. all of these - Spread time is defined as the interval during which_____________?
A. anode voltage drops from 10 % of its initial value to zero
B. anode current rises from 90 % to its final value
C. both (A) and (B)
D. anode current rises from 10 % to 90 % of its final value - A PNPN device having two gates is ___________?
A. Diac
B. Triac
C. SUS
D. BCS - Leakage current flows through the thyristor in_________?
A. forward blocking mode
B. reverse blocking mode
C. both forward and reverse blocking mode
D. forward conduction mode - The typical time of rising time lies between______________?
A. 10 – 20 µs
B. 40 – 60 µs
C. 1 – 4 µs
D. 90 – 100 µs - Electrical power output in a d.c. generator is equal to____________?
A. Electrical power developed in armature – copper losses
B. Mechanical power input – iron and friction losses
C. Electrical power developed in armature – iron and copper losses
D. Mechanical power input – iron and friction losses – copper losses - The control method used for PWM dc – dc converter is______________?
A. Voltage mode control
B. Current mode control
C. Hysteric control
D. All of these - The maximum firing angle in the half wave controlled regulator is_____________?
A. 180 degree
B. 190 degree
C. 200 degree
D. 210 degree - The phase angle of gate signal in TRIAC can be shifted by using_____________?
A. A capacitor
B. A variable resistor
C. An inductor
D. Only (a) and (b) - An SCR is made up of silicon because_____________?
A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium
