A. Breakdown of junction
B. Local hot spot
C. Insulation failure
D. None of these
Related Mcqs:
- What may happen high dV / dt____________?
A. Unwanted turn ON
B. Breakdown of J2 junction
C. Both A and B
D. Anyone of these - A power semiconductor may undergo damage due to____________?
A. High di/dt
B. High dv/dt
C. Low di/dt
D. Low dv/dt - Due to non sinusoidal waveform of the input current, the power factor of the rectifier is____________?
A. Negatively affected by firing angle
B. Negatively affected by distortion of the input current
C. Positively affected by both firing angle and distortion of the input current
D. Both (a) and (b) - What is used to protect a thyristor from high di / dt conditions__________?
A. Fuse.
B. Snubber circuit
C. Inductor
D. Voltage clamping device - Which of the following is used in SCR to protect from high dV / dt__________________?
A. Snubber circuit
B. Fuse
C. Equalizing circuit
D. Circuit breaker - Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor - To meet high current demand we use SCRs in______________?
A. series connection.
B. parallel connection.
C. anti parallel connection.
D. both B and C. - In forward blocking mode of a thyristor________?
A. junction J2 is in reverse bias and J1, J3 is in forward bias.
B. junction J3 is in forward bias and J1, J2 is in reverse bias.
C. Junction J1, J3 is in reverse bias and J2 is in forward bias.
D. Junction J1 and J2 is in forward bias and J3 is in reverse bias. - A thyristor can termed as__________?
A. AC switch
B. DC switch
C. Both a and B
D. Square wave switch - ON state voltage drop across SCR lie between the range_____________?
A. 0 – 0.5 V.
B. 0.5 – 1 V.
C. 1 – 1.5 V.
D. 1.5 – 2 V.
