A. SIT is a high power, high frequency device
B. SIT is a high power, low frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device
Related Mcqs:
- Which statement is true for latching current ___________?
A.It is related to turn off process of the device.
B. It is related to conduction process of device.
C. It is related to turn on process of the device.
D. Both C and D. - Which statement is true ?
A. Reverse recovery time ( trr ) > gate recovery time (tgr)
B. Device turn OFF time ( tq ) > reverse recover time (trr)
C. Circuit turn OFF time > device turn OFF time ( tq )
D. All of these - When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ___________?
A. CB
B. Snubber circuit
C. Voltage clamping device
D. Fast acting current limiting device (FACL fuse) - Which of following devices has highest di/dt and dv/dt capability?
A. SIT
B. SITH
C. GTO
D. SCR - Which of the following is used in heat sink_____________?
A. Iron
B. Aluminium
C. Carbon
D Silver - Which of the following is used in SCR to protect from high dV / dt__________________?
A. Snubber circuit
B. Fuse
C. Equalizing circuit
D. Circuit breaker - Which of following is normally ON device?
A. SIT
B. BJT
C. TRIAC
D. IGBT - Which of following is not a power transistor?
A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS - Which following is a two terminal three layer device?
A. BJT
B. Power dioed
C. MOSFET
D. None of above - By which one of the following we can measure the reliability of a string_____________?
A. String efficient
B. Reliability factor
C. Factor of safety
D. Derating factor
