A. SIT is a high power, high frequency device
B. SIT is a high power, low frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device
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Related Mcqs:
- Which statement is true for latching current ___________?
- A.It is related to turn off process of the device. B. It is related to conduction process of device. C. It is related to turn on process of the device. D. Both C and D....
- Which statement is true ?
- A. Reverse recovery time ( trr ) > gate recovery time (tgr) B. Device turn OFF time ( tq ) > reverse recover time (trr) C. Circuit turn OFF time > device turn OFF time ( tq ) D. All of these...
- When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ___________?
- A. CB B. Snubber circuit C. Voltage clamping device D. Fast acting current limiting device (FACL fuse)...
- Which of following devices has highest di/dt and dv/dt capability?
- A. SIT B. SITH C. GTO D. SCR...
- Which of the following is used in heat sink_____________?
- A. Iron B. Aluminium C. Carbon D Silver...
- Which of the following is used in SCR to protect from high dV / dt__________________?
- A. Snubber circuit B. Fuse C. Equalizing circuit D. Circuit breaker...
- Which of following is normally ON device?
- A. SIT B. BJT C. TRIAC D. IGBT...
- Which of following is not a power transistor?
- A. IGBTs B. COOLMOS C. TRIAC D. SITS...
- Which following is a two terminal three layer device?
- A. BJT B. Power dioed C. MOSFET D. None of above...
- By which one of the following we can measure the reliability of a string_____________?
- A. String efficient B. Reliability factor C. Factor of safety D. Derating factor...
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