A. Recovery is only 5 µs
B. Recovery is only 50 µs
C. Doping is carried out
D. None of these
Related Mcqs:
- If all the SCR’s of 3 phase PAC is replaced by diodes, they would be triggered_____________?
A. 120 degree after the zero crossing of the corresponding line voltages
B. 60 degree after the zero crossing of the corresponding line voltages
C. 120 degree before the zero crossing of the corresponding line voltages
D. 60 degree before the zero crossing of the corresponding line voltages - The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?
A. 130 μs
B. 135 μs
C. 140 μs
D. 145 μs - During reverse recovery time__________________?
A. charge carrier of junction J2 recombined
B. charge carrier of junction J1 is swept out
C. charge carrier of junction J3 is swept out
D. both B and C - During gate recovery time_____________?
A. charge carriers of J2 junction recombined
B. charge carriers of J2 junction is swept out
C. charge carrier of J1 junction removed
D. charge carriers of J3 junction is removed - When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ___________?
A. CB
B. Snubber circuit
C. Voltage clamping device
D. Fast acting current limiting device (FACL fuse) - Which of following devices has highest di/dt and dv/dt capability?
A. SIT
B. SITH
C. GTO
D. SCR - Which of the following is used in heat sink_____________?
A. Iron
B. Aluminium
C. Carbon
D Silver - Which of the following is used in SCR to protect from high dV / dt__________________?
A. Snubber circuit
B. Fuse
C. Equalizing circuit
D. Circuit breaker - Which of the following is true about SIT?
A. SIT is a high power, high frequency device
B. SIT is a high power, low frequency device
C. SIT is a high power, high voltage device
D. SIT is a low power, high frequency device - Which of following is normally ON device?
A. SIT
B. BJT
C. TRIAC
D. IGBT
