COOLMOS device can be used in application up to power range of___________?

Related Mcqs:

1. Which one is most suitable power device for high frequency (>100 KHz) switching application?

   A. BJT
   B. Power MOSFET
   C. Schottky diode
   D. Microwave transistor

2. Power transistor are type of___________?

   A. B.JTs
   B. MOSFETs
   C. IGBTs
   D. All of above

3. A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?

   A. IGBT
   B. FCT
   C. MCT
   D. GTO

4. The power MOSFET device is a___________?

   A. Current controlled unipolar device
   B. Voltage controlled unipolar device
   C. Current controlled bipolar device
   D. Voltage controlled bipolar device

5. TRIAC is a semiconductor power electronic device which contains____________?

   A. Two SCR’s connected in reverse parallel
   B. Two SCR’s connected in parallel
   C. Two SCR’s connected in series
   D. Two BJT’s connected in series

6. Power electronics essentially deals with control of a.c. power at____________?

   A. Frequencies above 20 kHz
   B. Frequencies above 1000 kHz
   C. Frequencies less than 10 Hz
   D. 50 Hz frequency

7. For series connected SCR’s dynamic equalising circuit consists of___________?

   A. R and C in series but with diode across C
   B. R and C in series but with diode across R
   C. Series R and diode with C across R
   D. Series R and diode with C across R

8. The ac output voltage waveform of VSI and AC output current waveform of CSI respectively is composed of___________?

   A. High dv / dt, low di / dt
   B. Low dv / dt, low di / dt
   C. Low dv / dt, high di / dt
   D. High dv / dt, high di / dt

9. A PNPN device having two gates is ___________?

   A. Diac
   B. Triac
   C. SUS
   D. BCS

10. Under normal operating condition voltage clamping device offers impedance of_________?

    A. high value.
    B. low value.
    C. zero value.
    D. moderate value.