A. High power phase control
B. High power current control
C. Low power current control
D. Low power phase control
Related Mcqs:
- A PNPN device having two gates is ___________?
A. Diac
B. Triac
C. SUS
D. BCS - The function of snubber circuit connected across the SCR is to___________?
A. Suppress dV / dt.
B. Increase dV / dt.
C. Decrease dV / dt.
D. Decrease di / dt. - Leakage current flows through the thyristor in_________?
A. forward blocking mode
B. reverse blocking mode
C. both forward and reverse blocking mode
D. forward conduction mode - Compared to transistor, _________ have lower on state conduction losses and higher power handling capability?
A. TRIACs
B. Semi conductor diodes
C. MOSFETs
D. Thyristor - The typical time of rising time lies between______________?
A. 10 – 20 µs
B. 40 – 60 µs
C. 1 – 4 µs
D. 90 – 100 µs - Electrical power output in a d.c. generator is equal to____________?
A. Electrical power developed in armature – copper losses
B. Mechanical power input – iron and friction losses
C. Electrical power developed in armature – iron and copper losses
D. Mechanical power input – iron and friction losses – copper losses - The control method used for PWM dc – dc converter is______________?
A. Voltage mode control
B. Current mode control
C. Hysteric control
D. All of these - The maximum firing angle in the half wave controlled regulator is_____________?
A. 180 degree
B. 190 degree
C. 200 degree
D. 210 degree - The phase angle of gate signal in TRIAC can be shifted by using_____________?
A. A capacitor
B. A variable resistor
C. An inductor
D. Only (a) and (b) - An SCR is made up of silicon because_____________?
A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium
