A. Susceptibility
B. Emission
C. Interference
D. Electromagnetic compatibility
Related Mcqs:
- For an SCR gate – cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance_____?
A. 111.9 Ω.
B. 11.19 Ω.
C. 108 Ω.
D. 115 Ω - A single phase ac – dc converter is also known as____________?
A. rectifier
B. inverter
C. chopper
D. regulator - TRIAC is a semiconductor power electronic device which contains____________?
A. Two SCR’s connected in reverse parallel
B. Two SCR’s connected in parallel
C. Two SCR’s connected in series
D. Two BJT’s connected in series - In a push – pull converter, the filter capacitor can be obtained as____________?
A. Cmin = V / ( Vr L f2 )
B. Cmin= ( 1 – D ) V / ( Vr L f2 )
C. Cmin= ( 1 – 2 D ) V / 32 ( Vr L f2 )
D. Cmin= ( 1 – 2 D ) V / 42 ( Vr L f2 ) - A single phase one pulse controlled circuit has a resistance R and counter emf E load 400 sin(314 t) as the source voltage. For a load counter emf of 200 V, the range of firing angle control is _____?
A. 30° to 150°.
B. 30° to 180°.
C. 60° to 120°.
D. 60° to 180°. - In EMC signal, the source delivers maximum power to the input of transmission line when the transmission line input impedance
A. Is equal to the source resistance
B. Greater than the source resistance
C. Smaller than the source resistance
D. None of these - A capacitive load in voltage source inverters generates ________________?
A. Small current spikes and can be reduced by using an inductive filter
B. Large current spikes and can be increased by using an inductive filter
C. Small current spikes and can be increased by using an inductive filter
D. Large current spikes and can be reduced by using an inductive filter - In a three phase voltage source inverters____________?
A. Only amplitude of voltage is controllable
B. Only phase is controllable
C. Both amplitude and phase is controllable
D. Amplitude, phase and frequency of voltages should always be controllable - The switching function of semiconductor devices can be characterized with___________?
A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay - The transfer function of PWM is generally developed in______________?
A. Time domain
B. Frequency domain
C. Either A. or B.
D. None of these