The values of h parameter of a transistor in CE arrangement are ____________ arrangement?

A. The same as for CB
B. The same as for CC
C. Different from that in CB
D. None of the above

The hfe parameter is called ______________in CE arrangement with output shorted?
A. Voltage gain B. Current gain C. Input impedance D. None of the above...
The h parameter approach gives correct results for_______________?
A. Large signals only B. Small signals only C. Both small and large signals D. None of the above...
The dimensions of hie parameter are _______________?
A. Mho B. Ohm C. Farad D. None of the above...
The parameter hie stands for input impedance in _____________?
A. CB arrangement with output shorted B. CC arrangement with output shorted C. CE arrangement with output shorted D. None of the above...
In CE arrangement, the value of input impedance is approximately equal to ______________?
A. Hie B. Hoe C. Hre D. None of the above...
In order to determine hfe and hie parameters of a transistor, __________ is an a.c. short-circuited?
B. Input C. Output D. Input as well as output E. None of the above...
A transistor behaves as a linear device for _____________?
A. Small signals only B. Large signals only C. Both small and large signals D. None of the above...
There are ______________ h parameters of a transistor?
A. Two B. Four C. Three D. None of the above...
If temperature changes, h parameters of a transistor ________________?
B. May or may not change C. Do not change D. Also change E. None of the above...
If the operating point changes, the h parameters of transistor_____________?
A. Also change B. Do not change C. May or may not change D. None of the above...