The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?

Related Mcqs:

1. For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?

   A. Not fall below 1 V
   B. Be zero
   C. Be 0.2 V
   D. None of the above

2. For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?

   A. Be zero
   B. Be 0.01 V
   C. Not fall below 0.7 V
   D. Be between 0 V and 0.1 V

3. For germanium transistor amplifier, VCE should_______________for faithful amplification?

   A. Be zero
   B. Be 0.2 V
   C. Not fall below 0.7 V
   D. None of the above

4. A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?

   A. 105 kO
   B. 530 kO
   C. 315 kO
   D. None of the above

5. If the zero signal dissipation of a transistor is 1W, then power rating of the transistor should be at least___________________?

   A. 5 W
   B. 33 W
   C. 75 W
   D. 1 W

6. In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of _____________________?

   A. RC + RL
   B. RC || RL
   C. RL
   D. RC

7. In order to get more voltage gain from a transistor amplifier, the transistor used should have_________________?

   A. Thin base
   B. Thin collector
   C. Wide emitter
   D. None of the above

8. The value of collector load RC in a transistor amplifier is _______________the output impedance of the transistor?

   A. The same as
   B. Less than
   C. More than
   D. None of the above

9. The leakage current across a pn junction is due to________________?

   A. Minority carriers
   B. Majority carriers
   C. Junction capacitance
   D. None of the above

10. The leakage current in a pn junction is of the order of________________?

    A. Aa
    B. mA
    C. kA
    D. µA