A. at its widest point
B. completely closed by the depletion region
C. extremely narrow
D. reverse baised
Related Mcqs:
- In a p-channel JFET, the charge carriers are _____________?
A. electrons
B. holes
C. both electrons and holes
D. none of the above - If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ______________?
A. is decreased
B. is increased
C. remains the same
D. none of the above - The channel of a JFET is between the ________________?
A. gate and drain
B. drain and source
C. gate and source
D. input and output - If the cross-sectional area of the channel in n-channel JEFT increases, the drain current _____________?
A. is increased
B. is decreased
C. remains the same
D. none of the above - The pinch-off voltage in a JFET is analogous to _____________ voltage in a vacuum tube?
A. anode
B. cathode
C. grid cut off
D. none of the above - n a common-source JFET amplifier, the output voltage is _____________?
A. 180o out of phase with the input
B. in phase with the input
C. 90o out of phase with the input
D. taken at the source - A certain JFET data sheet gives VGS(off) = -4 V. The pinch-off voltage Vp is _____________?
A. +4 V
B. -4 V
C. dependent on VGS
D. data insufficient - A common base configuration of a pnp transistor is analogous to _____________?of a JFET
A. common source configuration
B. common drain configuration
C. common gate configuration
D. none of the above - A JFET is a__________ driven device?
A. current
B. voltage
C. both current and voltage
D. none of the above - A certain common-source JFET has a voltage gain of 10. If the source bypass capacitor is removed, ______________?
A. the voltage gain will increase
B. the transconductance will increase
C. the voltage gain will decrease
D. the Q-point will shift