The switching function of semiconductor devices can be characterized with____________?

Related Mcqs:

1. The switching function of semiconductor devices can be characterized with___________?

   A. Duty ratio only
   B. Frequency only
   C. Duty ratio and frequency
   D. Duty ratio, frequency and time delay

2. Switching frequency of SITH is____________?

   A. 5 KHz
   B. 10 KHz
   C. 60 KHz
   D. 100 KHz

3. Which one is most suitable power device for high frequency (>100 KHz) switching application?

   A. BJT
   B. Power MOSFET
   C. Schottky diode
   D. Microwave transistor

4. In BJT, switching losses occurs___________?

   A. Only at turn – on
   B. Only at turn – off
   C. Both at turn on and off
   D. None of these

5. The IGBT resulted in higher switching speed and lower energy losses. It can be used for___________?

   A. Uninterruptible power supplies
   B. Induction heating system
   C. Constant voltage and frequency power supplies
   D. All of these

6. Which semiconductor device acts like a diode and two transistor?

   A. UJT
   B. Diac
   C. Triac
   D. SCR

7. A power semiconductor may undergo damage due to____________?

   A. High di/dt
   B. High dv/dt
   C. Low di/dt
   D. Low dv/dt

8. A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?

   A. IGBT
   B. FCT
   C. MCT
   D. GTO

9. Bidirectional semiconductor device is___________?

   A. Diode
   B. BJT
   C. SCR
   D. TRIAC

10. TRIAC is a semiconductor power electronic device which contains____________?

    A. Two SCR’s connected in reverse parallel
    B. Two SCR’s connected in parallel
    C. Two SCR’s connected in series
    D. Two BJT’s connected in series