A. Suppressing emissions
B. Reducing the efficiency of the coupling path
C. Reducing the susceptibility of the receptor
D. All of these
Related Mcqs:
- The effects of EMI can be reduced by____________?
A. Suppressing emissions
B. Reducing the efficiency of the coupling path
C. Reducing the susceptibility of the receptor
D. All of these - Harmonics in 3 phase inverters can be reduced by using___________?
A. Passive filter
B. Active filter
C. Both passive and active filters
D. None of these - A thyristor is basically________?
A. PNPN device
B. A combination of diac and triac
C. A set of SCRs
D. A set if SCR,diac and triac - The maximum di/dt in a SCR is____________?
A. Directly proportional to supply voltage
B. Directly proportional to inductance in the circuit
C. Inversely proportional to supply voltage
D. Both A and B - Thermal voltage VT can be given by____________?
A. Kq/T
B. KT/q
C. qT/K
D. (K2/q)(T + 1/T – 1) - For series connected SCR’s dynamic equalising circuit consists of___________?
A. R and C in series but with diode across C
B. R and C in series but with diode across R
C. Series R and diode with C across R
D. Series R and diode with C across R - In a 3 phase bridge rectifier the ripple frequency is _____________?
A. Equal to the input frequency
B. Twice the input frequency
C. Three times the input frequency
D. Six times the input frequency - Very large values of modulation index (greater than 3.24) lead to___________?
A. Square AC output voltage
B. Sine AC output voltage
C. Triangular AC output voltage
D. Trapezoidal AC output voltage - Ripple factor is the ratio of______________________?
A. Rms value of the ac component of load voltage to the dc voltage
B. Average value of the ac component of load voltage to the peak value of voltage
C. Average value of the dc component of load voltage to the ac voltage
D. Peak value of the dc component of load voltage to the ac voltage - MOSFET stands for______________?
A. Metal – oxide semiconductor field effect transistor
B. Molybdenum – oxide semiconductor field effect transistor
C. Metal – oxide silicon field effect transistor
D. Metal – oxide semiconductor field effect transmitter