The early effect in a bipolar junction transistor is caused by_______________?

Related Mcqs:

1. The current gain of a bipolar transistor drops at high frequencies because of____________?

   A. Transistor capacitances
   B. High current effects in the base
   C. Parasitic inductive elements
   D. The early effect

2. Which of the following amplifier circuit using junction transistor has the best gain?

   A. Common base
   B. Common emitter
   C. Common collector
   D. All have the same gain

3. Which of the following is not associated with a p-n junction?

   A. junction capacitance
   B. charge storage capacitance
   C. depletion capacitance
   D. channel length modulation

4. In a p-n junction diode under reverse bias , the magnitude of electric field is maximum at_____________?

   A. the edge of the depletion region on the p-side
   B. the edge of the depletion region on the n-side
   C. the p-n junction
   D. the center of the depletion region on the n-side

5. Most of the linear ICs are based on the two-transistor differential amplifier because of its___________?

   A. input voltage dependent linear transfer characteristic
   B. high voltage gain
   C. high input resistance
   D. high CMRR

6. When a transistor is connected in common emitter mode, it with have__________?

   A. negligible input resistance and high output resistance
   B. high input resistance and low output resistance
   C. medium input resistance and high output resistance
   D. low input resistance as well as output resistance

7. Generally, the gain of a transistor amplifier falls at high frequencies due to the___________?

   A. Internal Capacitance of the device
   B. Coupling capacitor at the input
   C. Skin effect
   D. Coupling capacitor at the output

8. . If =0.98 ,Ico=6µA and Iβ=100µA for a transistor,then the value of Ic will be______?

   A. 2.3mA
   B. 3.2mA
   C. 4.6 mA
   D. 5.2mA

9. An npn BJT has gm=38mA/v, cµ =10¯14 F, cπ =10¯13F and DC current gain β0=90.For this transistor fT & fβ are________?

   A. fT =1.64 x 108 Hz & fβ = 1.47 x 1010 Hz.
   B. fT =1.47 x 1010 Hz & fβ = 1.64 x 108 Hz
   C. fT =1.33 x 1012 Hz & fβ = 1.47 x 1010 Hz
   D. fT =1.47 x 1010 Hz & fβ = 1.33 x 1012 Hz

10. The encapsulation of transistor is necessary for__________?

    A. preventing radio interference
    B. preventing photo-emission effects
    C. avoiding loss of free electrons
    D. mechanical ruggedness