A. common emitter
B. common base
C. common collector
D. none of the above
Related Mcqs:
- The leakage current in CE arrangement is____________that in CB arrangement?
A. more than
B. less than
C. the same as
D. none of the above - The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is___________?
A. 0o
B. 180o
C. 90o
D. 270o - The voltage gain of a transistor connected in common collector arrangement is____________?
A. equal to 1
B. more than 10
C. more than 100
D. less than 1 - The phase difference between the input and output voltages of a transistor connected in common collector arrangement is_____________?
A. 1800
B. 00
C. 900
D. 2700 - The most commonly used semiconductor in the manufacture of a transistor is_____________?
A. germanium
B. silicon
C. carbon
D. none of the above - The phase difference between the input and output voltages in a common base arrangement is___________?
A. 180o
B. 90o
C. 270o
D. 0o - A transistor has____________?
A. one pn junction
B. two pn junctions
C. three pn junctions
D. four pn junctions - The collector-base junction in a transistor has___________?
A. forward bias at all times
B. reverse bias at all times
C. low resistance
D. none of the above - The collector of a transistor is____________doped?
A. heavily
B. moderately
C. lightly
D. none of the above - In a pnp transistor, the current carriers are______________?
A. acceptor ions
B. donor ions
C. free electrons
D. holes