A. forward bias at all times
B. reverse bias at all times
C. low resistance
D. none of the above
Related Mcqs:
- The voltage gain of a transistor connected in common collector arrangement is____________?
A. equal to 1
B. more than 10
C. more than 100
D. less than 1 - The phase difference between the input and output voltages of a transistor connected in common collector arrangement is_____________?
A. 1800
B. 00
C. 900
D. 2700 - In a transistor if ß = 100 and collector current is 10 mA, then IE is___________?
A. 100 mA
B. 100.1 mA
C. 110 mA
D. none of the above - The collector of a transistor is____________doped?
A. heavily
B. moderately
C. lightly
D. none of the above - In a transistor, the base current is about_________of emitter current?
A. 25%
B. 20%
C. 35 %
D. 5% - At the base-emitter junctions of a transistor, one finds___________?
A. a reverse bias
B. a wide depletion layer
C. low resistance
D. none of the above - The base of a transistor is____________doped?
A. heavily
B. moderately
C. lightly
D. none of the above - As the temperature of a transistor goes up, the base-emitter resistance___________?
A. decreases
B. increases
C. remains the same
D. none of the above - The most commonly used semiconductor in the manufacture of a transistor is_____________?
A. germanium
B. silicon
C. carbon
D. none of the above - The value of a of a transistor is_____________?
A. more than 1
B. less than 1
C. 1
D. none of the above