In dual converters________________?

Related Mcqs:

1. Which statement is true for latching current ___________?

   A.It is related to turn off process of the device.
   B. It is related to conduction process of device.
   C. It is related to turn on process of the device.
   D. Both C and D.

2. CB used for over current protection of thyristor operates when the fault current is__________?

   A. of long period
   B. of short duration
   C. both (A) and (B)
   D. neither (A) nor (B)

3. Gate circuit or triggering circuit of a thyristor is

   A. lower power circuit.
   B. high power circuit.
   C. magnetic circuit.
   D. may be low power or high power circuit

4. A power MOSFET has three terminals called___________?

   A. Collector, emitter and gate
   B. Drain, source and gate
   C. Drain, source and base
   D. Collector, emitter and base

5. Typical range of thyristor turn OFF time is______________?

   A. 3 – 10 µs
   B. 3 – 50 µs
   C. 3 – 100 µs
   D. 3 – 500 µs

6. The power demand can be estimated approximately by___________?

   A. Load survey method
   B. Mathematical method
   C. Statistical method
   D. Economic parameters

7. Anode of an operational SCR is _______________?

   A. Always positive w.r.t cathode
   B. Always negative w.r.t anode
   C. Always positive w.r.t anode
   D. Always negative w.r.t cathode

8. In BJT, switching losses occurs___________?

   A. Only at turn – on
   B. Only at turn – off
   C. Both at turn on and off
   D. None of these

9. The conduction losses in IGBT is____________?

   A. More than that of MOSFET
   B. Lower than that of MOSFET
   C. Equal to that of MOSFET
   D. Equal to that of BJT

10. The transfer function of PWM is generally developed in______________?

    A. Time domain
    B. Frequency domain
    C. Either A. or B.
    D. None of these