A. Only at turn – on
B. Only at turn – off
C. Both at turn on and off
D. None of these
Related Mcqs:
- The IGBT resulted in higher switching speed and lower energy losses. It can be used for___________?
A. Uninterruptible power supplies
B. Induction heating system
C. Constant voltage and frequency power supplies
D. All of these - A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO - In BJT, the forward biased base emitter junction inject holes from base to emitter, the holes_______?
A. Do not contribute to the collector current
B. Result in net current flow component into the base
C. Contribute to the collector current
D. Only (a) and (b)
E. Only (b) and (c) - Switching frequency of SITH is____________?
A. 5 KHz
B. 10 KHz
C. 60 KHz
D. 100 KHz - Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor - The switching function of semiconductor devices can be characterized with___________?
A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay - The switching function of semiconductor devices can be characterized with____________?
A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay - Compared to transistor, _________ have lower on state conduction losses and higher power handling capability?
A. TRIACs
B. Semi conductor diodes
C. MOSFETs
D. Thyristor - For a buck converter to reduce the conduction losses in diode
A. A high on – resistance switch can be added in parallel
B. A low on – resistance switch can be added in parallel
C. A high on – resistance switch can be added in series
D. A low on – resistance switch can be added in series - The conduction losses in IGBT is____________?
A. More than that of MOSFET
B. Lower than that of MOSFET
C. Equal to that of MOSFET
D. Equal to that of BJT
