A. Line integrated stabilization network
B. Line impedance stabilization network
C. Line integrated stored network
D. Laser integrated stabilization networking
Related Mcqs:
- Under over voltage condition impedance offered by the voltage clamping device is__________?
A. low
B. High
C. moderate
D. infinity - Which semiconductor device acts like a diode and two transistor?
A. UJT
B. Diac
C. Triac
D. SCR - When a large surge current of very short duration flows through a thyristor then which one of the following device will operate to protect the thyristor ___________?
A. CB
B. Snubber circuit
C. Voltage clamping device
D. Fast acting current limiting device (FACL fuse) - COOLMOS device can be used in application up to power range of___________?
A. 1 KVA
B. 2 KVA
C. 500 VA
D. 100 KVA - Which one is most suitable power device for high frequency (>100 KHz) switching application?
A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor - Which of following is normally ON device?
A. SIT
B. BJT
C. TRIAC
D. IGBT - Which following is a two terminal three layer device?
A. BJT
B. Power dioed
C. MOSFET
D. None of above - The power MOSFET device is a___________?
A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device - Bidirectional semiconductor device is___________?
A. Diode
B. BJT
C. SCR
D. TRIAC - TRIAC is a semiconductor power electronic device which contains____________?
A. Two SCR’s connected in reverse parallel
B. Two SCR’s connected in parallel
C. Two SCR’s connected in series
D. Two BJT’s connected in series
