A. Directly proportional to Vm of supply voltage
B. Inversely proportional to Vm of supply voltage
C. Inversely proportional to L in the circuit
D. Both A and C
Related Mcqs:
- The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times - The maximum di/dt in a SCR is____________?
A. Directly proportional to supply voltage
B. Directly proportional to inductance in the circuit
C. Inversely proportional to supply voltage
D. Both A and B - With gate open, the maximum anode current at which SCR is turned off from ON condition is called____________?
A. breakdown voltage
B. peak reverse voltage
C. holding current
D. latching current - A silicon controlled racitifier (SCR) is a ____________?
A. Unijunction device
B. Device with three junction
C. Device with four junction
D. None of the above - An SCR is considered to be a semi controlled device because_______?
A. it can be turned OFF but not ON with a gate pulse.
B. it conducts only during one half cycle of an alternating current wave.
C. it can be turned ON but not OFF with a gate pulse.
D. it can be turned ON only during one half cycle of an AC. - The function of snubber circuit connected across the SCR is to___________?
A. Suppress dV / dt.
B. Increase dV / dt.
C. Decrease dV / dt.
D. Decrease di / dt. - SCR will be turned off when anode current is_______________?
A. < latching current but greater than holding current and gate signal is 0.
B. less than holding current.
C. < latching current but greater than holding current and gate signal is present.
D. both (A) and (B). - ON state voltage drop across SCR lie between the range_____________?
A. 0 – 0.5 V.
B. 0.5 – 1 V.
C. 1 – 1.5 V.
D. 1.5 – 2 V. - Anode current in an SCR consists of____________?
A. holes only
B. electrons only
C. either electron or holes
D. Both electron and holes - An SCR is made up of silicon because_____________?
A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium
