A. IGBTs
B. COOLMOS
C. TRIAC
D. SITS
Related Mcqs:
- Compared to transistor, _________ have lower on state conduction losses and higher power handling capability?
A. TRIACs
B. Semi conductor diodes
C. MOSFETs
D. Thyristor - Power transistor are type of___________?
A. B.JTs
B. MOSFETs
C. IGBTs
D. All of above - Which semiconductor device acts like a diode and two transistor?
A. UJT
B. Diac
C. Triac
D. SCR - Power electronics essentially deals with control of a.c. power at____________?
A. Frequencies above 20 kHz
B. Frequencies above 1000 kHz
C. Frequencies less than 10 Hz
D. 50 Hz frequency - For an SCR gate – cathode characteristic is a straight line of 130. For triggered source volume of 15 V and allowable gate power dissipation of 0.5 W compute the gate source resistance_____?
A. 111.9 Ω.
B. 11.19 Ω.
C. 108 Ω.
D. 115 Ω - A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
A. IGBT
B. FCT
C. MCT
D. GTO - The power demand can be estimated approximately by___________?
A. Load survey method
B. Mathematical method
C. Statistical method
D. Economic parameters - Electrical power output in a d.c. generator is equal to____________?
A. Electrical power developed in armature – copper losses
B. Mechanical power input – iron and friction losses
C. Electrical power developed in armature – iron and copper losses
D. Mechanical power input – iron and friction losses – copper losses - In a square – wave operation of 3 phase CSIs, the power values are on for___________?
A. 60 degree
B. 90 degree
C. 120 degree
D. 150 degree - The power demand can be estimated approximately by____________?
A. Load survey method
B. Mathematical method
C. Statistical method
D. Economic parameters