A. BJT
B. Power MOSFET
C. Schottky diode
D. Microwave transistor
Related Mcqs:
- The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times - Switching frequency of SITH is____________?
A. 5 KHz
B. 10 KHz
C. 60 KHz
D. 100 KHz - COOLMOS device can be used in application up to power range of___________?
A. 1 KVA
B. 2 KVA
C. 500 VA
D. 100 KVA - For swept frequency measurements, the input impedance of the mismatched transmission line would vary with frequency as the electrical length of the transmission line would
A. Decrease with frequency
B. Remains same with change in frequency
C. Increase with frequency
D. Either A. or B. - The switching function of semiconductor devices can be characterized with___________?
A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay - In BJT, switching losses occurs___________?
A. Only at turn – on
B. Only at turn – off
C. Both at turn on and off
D. None of these - The IGBT resulted in higher switching speed and lower energy losses. It can be used for___________?
A. Uninterruptible power supplies
B. Induction heating system
C. Constant voltage and frequency power supplies
D. All of these - The switching function of semiconductor devices can be characterized with____________?
A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay - The power MOSFET device is a___________?
A. Current controlled unipolar device
B. Voltage controlled unipolar device
C. Current controlled bipolar device
D. Voltage controlled bipolar device - TRIAC is a semiconductor power electronic device which contains____________?
A. Two SCR’s connected in reverse parallel
B. Two SCR’s connected in parallel
C. Two SCR’s connected in series
D. Two BJT’s connected in series
