A. Use of snubber circuit.
B. Using heat sink.
C. Using CB and fuse.
D. Using equalizing circuit
Related Mcqs:
- The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
A. Turn on
B. Not turn on
C. Turn on if inductance is removed
D. Turn on if pulse frequency us increased to two times - What is used to protect the SCR from over current ________________?
A. CB and fuse.
B. Heat sink.
C. Snubber circuit.
D. Voltage clamping device. - Which of the following is used in SCR to protect from high dV / dt__________________?
A. Snubber circuit
B. Fuse
C. Equalizing circuit
D. Circuit breaker - A silicon controlled racitifier (SCR) is a ____________?
A. Unijunction device
B. Device with three junction
C. Device with four junction
D. None of the above - An SCR is considered to be a semi controlled device because_______?
A. it can be turned OFF but not ON with a gate pulse.
B. it conducts only during one half cycle of an alternating current wave.
C. it can be turned ON but not OFF with a gate pulse.
D. it can be turned ON only during one half cycle of an AC. - The function of snubber circuit connected across the SCR is to___________?
A. Suppress dV / dt.
B. Increase dV / dt.
C. Decrease dV / dt.
D. Decrease di / dt. - SCR will be turned off when anode current is_______________?
A. < latching current but greater than holding current and gate signal is 0.
B. less than holding current.
C. < latching current but greater than holding current and gate signal is present.
D. both (A) and (B). - ON state voltage drop across SCR lie between the range_____________?
A. 0 – 0.5 V.
B. 0.5 – 1 V.
C. 1 – 1.5 V.
D. 1.5 – 2 V. - With gate open, the maximum anode current at which SCR is turned off from ON condition is called____________?
A. breakdown voltage
B. peak reverse voltage
C. holding current
D. latching current - An SCR is made up of silicon because_____________?
A. silicon has large leakage current than germanium
B. silicon has small leakage current than germanium
C. silicon has small leakage voltage than germanium
D. silicon has large leakage voltage than germanium
