A. Duty ratio only
B. Frequency only
C. Duty ratio and frequency
D. Duty ratio, frequency and time delay
A. Insulated gate bipolar transistor
B. Insulated gate bidirectional transistor
C. Inductive gate bipolar transistor
D. Inductive gate bidirectional transistor
A. Electrical power developed in armature – copper losses
B. Mechanical power input – iron and friction losses
C. Electrical power developed in armature – iron and copper losses
D. Mechanical power input – iron and friction losses – copper losses
A. Lossless
B. Carry current in any direction when it is on
C. Does not carry any current in any direction when it is off
D. All of these
A. Zero
B. Non zero
C. Equal to the sum of voltage when switch is open
D. Twice of the voltage when switch is open
A. It will rotate at the same speed as that with its field winding closed
B. It will rotate at less speed as that with its field winding closed
C. It will rotate at dangerously high speed
D. None of these
A. Indirect switch matrix circuits
B. Direct switch matrix circuits
C. Embedded converters
D. All of these
A. High speed operation
B. High rupturing capacity
C. No ageing effect
D. All of the above
A. Load survey method
B. Mathematical method
C. Statistical method
D. Economic parameters